| 摘要 |
PURPOSE:To prevent the annulment of an internal stripe structure, by forming a groove right above a current blocking layer of multi-layer structure formed on a substrate possessing a ridge, and forming a double hetero-structure in the blocking layer containing the groove. CONSTITUTION:A ridge is formed on a GaAs substrate 1, and a current blocking layer 10 is formed thereon by epitaxial growth, wherein a plurality of GaAs layers having a conduction type inverse to the substrate and barrier layers are alternately formed. Using a photo mask, a central portion of the ridge in the blocking layer 10 is eliminated in the form of a stripe, which is used as a mask for etching to expose a part of the substrate 1. After that, a double hetero-structure is grown on the substrate surface, followed by the formations of a clad layer 4, an active layer 5, a clad layer 6 and a cap layer 7. In this manner, the annulment of an internal stripe structure can be prevented, even if the thickness and the carrier density of the current blocking layer disperse irregularly. Consequently, a laser device which operates with a small current and oscillates in a fundamental mode can be manufactured with high reproducibility.
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