发明名称 GAAS FIELD EFFECT TYPE TRANSISTOR
摘要 PURPOSE:To eliminate strain yielded in the vicinity of an interface between a GaAs substrate and a passivation film, by a structure wherein a pellet is fixed and then metal wires are bonded, and thereafter the passivation film is formed. CONSTITUTION:A pellet 1 comprises an active layer on its surface, electrodes 4 and a GaAs substrate, on the surface of which a heat radiating electrode is formed. The pellet 1 is fixed to a package comprising copper and the like with a fixing material 2. An outer lead 5, which is provided on the package 3, and the electrodes 4 on the pellet 1 are connected with thin metal wires 6 comprising Au and the like. A passivation film 7 comprising SiO2 is formed on the entire surface of the pellet 1 including the electrodes 4, to which the thin metal wires 6 are connected. Since the passivation film 7 is deposited after the pellet 1 is fixed and the thin metal wires are bonded, strain is not yielded in the passivation film 7.
申请公布号 JPS62186538(A) 申请公布日期 1987.08.14
申请号 JP19860029356 申请日期 1986.02.12
申请人 NEC CORP 发明人 TOKUNAGA KAZUNAO
分类号 H01L29/812;H01L21/31;H01L21/338;H01L29/80 主分类号 H01L29/812
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