| 摘要 |
PURPOSE:To etch a polyimide layer finely without defects, by performing the etching with a metal layer and a silicon oxide layer, which is formed on the metal layer, as masks. CONSTITUTION:On a polyimide layer 2, which is formed on a wafer 1, a metal layer 3 made of aluminum, molibdenum and the like is formed. A very thin photoresist layer 4 is formed between the polyimide layer 2 and the metal layer 3. A silicon oxide layer 5 is formed with spin off glass, and the metal layer 3 is covered. A photoresist layer 6 is formed, and patterning is performed. The silicon oxide layer 5 and the metal layer 3 are patterned. The polyimide layer 2 is etched by a reactive ion etching method. The photoresist layer 6 is usually removed during the etching of the polyimide. The silicon oxide layer 5 and the metal layer 3 are removed by the lift-off method of the photoresist 4.
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