| 摘要 |
PURPOSE:To prevent protruded parts yielded in Al and electromigration of Al, by holding an Al layer with high-melting point metal layers. CONSTITUTION:A substrate to be grown in placed in a reaction container. At first, a raw material gas including a high-melting metal is introduced in the reaction container. A high-melting point metal layer 25 is grown on the substrate to be grown by the thermal decomposition of the raw material gas including the high-melting point metal. Then the introduction of the raw material gas including the high-melting point metal is stopped, and organic Al and hydrogen are introduced in the reaction container. An Al layer 26 is grown on the substrate to be grown by the decomposition of the organic Al. Finally, the introduction of the organic Al and the hydrogen is stopped, and the raw material gas including the high-melting point metal is introduced in the reaction container. A high-melting point metal 27 is grown on the substrate to be grown by the decomposition of the raw material gas including the high-melting metal. Thus protruded parts yielded of the Al and the electromigration of the Al can be prevented.
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