| 摘要 |
PURPOSE:To improve the quality of a semiconductor device, in a counter electrode type plasma etching apparatus, by performing reactive ion etching, and further performing light excited etching, in which reacting gas is excited high light. CONSTITUTION:A sample 6 is mounted on one side of a counter electrode 4. Light is projected on the surface of the sample from electrodes 5' on the other side. High frequency power is applied on the required region of the semiconductor substrate 6, and reactive ion etching is performed. The high frequency power is cut OFF, and reacting gas is changed to mixed gas of Cl2 and O2. The reacting gas is excited with light from an ultraviolet-ray source 10, and etching is performed. Then, the products of reaction such as AsF3 and GaF3, which are formed by the RIE etching, are removed, and machining damages are eliminated.
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