| 摘要 |
PURPOSE:To round the shape of an Si surface, and to relax a partial change into a thin-film and field concentration on oxidation by forming an SiO2 film in 100Angstrom or more to the Si surface having a solid shape and removing the SiO2 film through etching. CONSTITUTION:A mask 12 is executed to an Si substrate 11, and a groove 13 is formed through anisotropic etching. The surface of Si 11 is thermally oxidized once, annealed in an inert-gas atmosphere, and coated with an SiO2 film 16 in 100Angstrom or more twice or more, and the film is removed through etching. Roundnesses 14, 15 are shaped to the Si surface at that time. A gate oxide film 17 and a gate electrode 18 are formed. According to the method, a change into thin-films and field concentration at the corner sections of the gate oxide film 17 are avoided, thus improving the reliability of an element.
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