| 摘要 |
PURPOSE:To improve adhesion and solderability, and to enhance the characteristic side and reliability of a semiconductor device by forming a back electrode for a semiconductor base body by either constitution of NiCr-Au, NiCr-Ag-Au or NiCr-Sn-Ag. CONSTITUTION:The back of a semiconductor element 11 is polished, and an NiCr layer 12 in predetermined thickness is superposed to an Ag layer 13 and shaped through a sputtering method. An Au layer 14 in prescribed thickness is formed onto the layer 13, and the whole is sintered for a fixed time at a fixed temperature. A back electrode is constituted of an silicon base body and ohmic contacts, thus improving the adhesion and stability of a plurality of films. Back structure is not limited to an NiCr-Ag-Au layer, and is shaped in he structure of an NiCr-Au layer or an NiCr-Sn-Ag layer, thus enhancing the adhesion and solderability of the layers, then improving the characteristics and reliability of a semiconductor device.
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