| 摘要 |
1,049,438. Doping semi-conductors. SIEMENS-SCHUCKERTWERKE A.G. June 4, 1965 [June 20, 1964], No. 24056/65. Heading H1K. Dopants or other foreign substances are diffused into a monocrystalline semi-conductor body by sealing the body and two separate sources of the foreign substances in an ampoule and heating, after which the interior of the ampoule is divided into two by fusion so that the body and one of the sources are contained in one part of the ampoule which is further heated. A quartz tube 2 contains silicon discs 3, quartz support rings 4 and 5, quartz tube sections 8 and 10, an aluminium source 6 comprising a silicon disc with a drop of aluminium alloyed thereto and a gallium source 7 also comprising Ga on a silicon disc. The ampoule 2 is degassed under vacuum at 1000‹ C. prior to sealing off at 9. The sealed ampoule is heated to diffuse Ga and Al into the Si discs and then the tube surrounding tube section 10 is sealed off and further heated to diffuse in Al. In another embodiment, another tube section like 10 is included so that the Al source may also be sealed off from the discs, thus enabling the discs to be subject to heat treatment only. A method of cleaning the quartz pieces prior to use is described. It is stated that rectifiers, transistors or photo-semi-conductor devices may be constructed using the invention. A mode of making a PNPN thyristor is briefly described.
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