| 摘要 |
<p>PURPOSE:To obtain a hybrid IC having high precision by loading an element consisting of a semiconductor thin-film onto a ceramic substrate, to which a pattern is shaped, connecting the element by an Au wire and trimming an element function. CONSTITUTION:An Si pellet 4 to which a thin-film resistance pattern 5 is shaped is bonded 3 onto a ceramic substrate 1 with a thick-film conductor pattern 2. The patterns 2 and 5 are connected by an Au wi 6. The function of the pattern 5 is trimmed. The pattern is sheathed. It is convenient that a trimming section is shaped previously to the pattern 5. According to the constitution, A resistor and a capacitor can be function-trimmed with high precision.</p> |
