| 摘要 |
PURPOSE:To shorten the manufacturing time and to improve the yield of a semiconductor device by providing an Si film having 0.4mum or less of thickness under reduced pressure on an insulation substrate, and forming a semiconductor element in a region separated from the element by oxidizing. CONSTITUTION:H2 and SiH4 are fed on a sapphire substrate 31 to form a CVD Si film 32 at 500 Torr or less. An element isolation film 34 is formed by selectively oxidizing, and a gate oxide film 35, a gate electrode 36, a gate oxide film 37 and a gate electrode 38 are formed on the film 32. Then, P<+> type source, drain layers 39, 40 and then N<+> type source, drain layers 41, 42 are formed to obtain a CMOS/SOS gate array. Etching step can be omitted in case of isolating the element to reduce the manufacturing cost.
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