| 摘要 |
PURPOSE:To manufacture two kinds of resistors by few processes in the same layer by increasing the resistance of polycrystalline Si, patterning a wiring an manufacturing a low resistance section through thermal diffusion. CONSTITUTION:A field oxide film 2 is formed onto a semiconductor substrate 1, polycrystalline Si 3 is laminated on the oxide film 2, and an impurity is implanted so as to shape arbitrary resistance. A photo-resist 5 is applied onto the whole surface, and the resist 5 is patterned so as to acquire a polycrystalline Si wiring. Si 3 is patterned, using the resist 5 as a mask. The resist 5 is removed, a nitride film 7 is deposited, the resist 5 is applied onto the nitride film, and the resist 5 is patterned so as to coat only Si 3 as a section having high resistance. The film 7 is etched, employing the resist 5 as a mask. The resist 5 is removed, and an impurity is implanted into Si 3 through a thermal diffusion.The impurity is not diffused to Si 3 coated with the film 7 at that time, thus manufacturing two kinds of resistors in the same layer.
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