| 摘要 |
<p>A method for producing metal interconnect tracks which have a thickness at least as great as one half of their width. This is to allow closer spacing of integrated circuit components and thus a more optimal use of semiconductor surface space. The method (fig. 3) is based upon deposition of a relatively thick film (7) of dielectric (2 νm) and the delineation of this film (7) using an etch resistant mask (9) and an anisotropic etch technique, this technique defining deep channels two microns or less in width to contain interconnect metal. Metal (13) is deposited by a conformal technique to infill the channels and thereafter surplus metal removed to define an interconnection pattern of metal tracks (15). In one example described, polyimide dielectric material is etched by oxygen plasma using a tungsten mask, and interconnect tungsten metal deposited by low pressure chemical vapour deposition. Alternatively, silicon dioxide dielectric material and aluminium masks and metallisation material may be employed with appropriate etchants.</p> |
