| 摘要 |
PURPOSE:To make isolation between elements easy when multi-elements are formed by forming a conductive layer and a cap layer on a semi-insulating high resistance substrate by GaAs or AlxGa1-xAs (0<x<1), and further forming electrodes for connecting the cap layer, the conductive layer with the substrate. CONSTITUTION:An undoped GaAs layer 32 which becomes a buffer layer is grown between a semi-insulating high resistance GaAs substrate 31 of (100) azimuth and an element on the substrate, and an undoped Ald0.3Ga0.7As layer 33 for preventing holes from escaping from a conductive layer 34 provided later thereon to the layer 32 thereon. Then, a P-type Al0.3Ga0.7As conductive layer 34 and a P-type GaAs cap layer 35 for forming an element are laminated, deposited and formed in a mesa shape to the layer 33 by photolithographic technique, and the layer 35 is divided by cutting out the center of the layer 35 into the layers 35a, 35b. Then, an Auzn alloy electrode 36b is covered on the exposed surface of the layer 32 from the layers 35a, 35b.
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