SEMICONDUCTOR INJECTION LASERS

摘要

Degradation of the cleaved light output surface of a semiconductor crystal injection laser is reduced through control of surface recombination by providing an annealed optically transparent coating at least one ingredient of which has a higher bandgap than said crystal over the cleaved light output surface. Crystals of GaAs, GaAlAs and GaInAsP are provided with annealed coatings of ZnS, CdS, CdTe and CdSe.