Semiconductor deposition method and device.

摘要

A method is disclosed of epitaxially depositing a semiconductor material (312) on a substrate (311) of different material while accommodating lattice mismatch in a manner that results in improved epitaxially deposited material. In a disclosed embodiment GaAs is epitaxially deposited by molecular beam epitaxy on a silicon substrate having a [100] crystallographic surface tilted in the <001> direction. Improved semiconductor devices, made using the disclosed technique, are also set forth.