发明名称 Semiconductor memory device.
摘要 <p>A semiconductor memory device includes a plurality of memory cells arranged in rows and columns, a plurality of bit lines, each coupled to the memory cells forming one column, and a MOS transistor connected between a power supply terminal and one end of every bit line. The device further includes at least one test memory cell coupled in series with the MOS transistor, thus forming a series circuit connected between the power supply terminal and the ground.</p>
申请公布号 EP0231903(A2) 申请公布日期 1987.08.12
申请号 EP19870101309 申请日期 1987.01.30
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OKUDA, TAIZO C/O PATENT DIVISION;SAITO, SHINJI C/O PATENT DIVISION;SHISHIKURA, NOBUO C/O PATENT DIVISION
分类号 G11C29/00;G11C16/04;G11C17/00;G11C29/06;G11C29/24;G11C29/50;(IPC1-7):G11C29/00 主分类号 G11C29/00
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