发明名称 |
Semiconductor memory device. |
摘要 |
<p>A semiconductor memory device includes a plurality of memory cells arranged in rows and columns, a plurality of bit lines, each coupled to the memory cells forming one column, and a MOS transistor connected between a power supply terminal and one end of every bit line. The device further includes at least one test memory cell coupled in series with the MOS transistor, thus forming a series circuit connected between the power supply terminal and the ground.</p> |
申请公布号 |
EP0231903(A2) |
申请公布日期 |
1987.08.12 |
申请号 |
EP19870101309 |
申请日期 |
1987.01.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OKUDA, TAIZO C/O PATENT DIVISION;SAITO, SHINJI C/O PATENT DIVISION;SHISHIKURA, NOBUO C/O PATENT DIVISION |
分类号 |
G11C29/00;G11C16/04;G11C17/00;G11C29/06;G11C29/24;G11C29/50;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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