发明名称 METHOD FOR DRY ETCHING PHOTOMASK BLANK
摘要 PURPOSE:To remarkably improve the rate of dry etching of chromium boride on a transparent glass substrate by using a gaseous mixture of carbon tetrachloride with chloroform and oxygen as an etching gas. CONSTITUTION:When a photomask blank formed by laminating a chromium film contg. boron on a transparent glass substrate is dry etched with gas plasma, a gaseous mixture of carbon tetrachloride with chloroform and oxygen is used as an etching gas. The composition of the gaseous mixture is composed of, by volume, 5-17% carbon tetrachloride, 17-33% chloroform and 50-72% oxygen. The chromium film contg. boron may further contain nitrogen, oxygen and carbon.
申请公布号 JPS62182289(A) 申请公布日期 1987.08.10
申请号 JP19860024072 申请日期 1986.02.07
申请人 ASAHI GLASS CO LTD 发明人 ENOKI KIYOO;OGAWA SHOICHI;MUTO RYUJIRO;HARANO TAKESHI;SHINKAI NORIHIKO
分类号 C23F4/00 主分类号 C23F4/00
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