PRODUCTION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL

摘要

PURPOSE:To produce a compound semiconductor crystal having uniform impurity concentration throughout whole crystal in high yield, by carrying out the pulling-up of a single crystal while continuously varying the intensity of applied magnetic field according to the volume of pulled-up single crystal. CONSTITUTION:A crucible 6 contains a molten raw material liquid 7, which is covered with a usually liquid sealant 8 and heated with a heater 12. A magnetic field perpendicular to the liquid surface is applied to the molten liquid with an air-core solenoid coil 10. A seed crystal 4 is dipped in the molten raw material liquid 7 and pulled up under rotation to effect the growth of a single crystal 9. The concentration of impurities entrained in the crystal can be uniformized by varying the intensity of the magnetic field according to the pulling-up of the single crystal 9 to obtain a compound semiconductor single crystal having uniform impurity concentration along the pulling-up direction.