| 摘要 |
PURPOSE:To form a thin film of single crystal in good reproducibility, by partially removing an oxidized film formed on the top of a polycrystal film, melting and recrystallizing the polycrystal film so that explosion of the polycrystal film and the oxidized film occurring in melting can be prevented. CONSTITUTION:For example, a Si substrate 1 is thermally oxidized to form a SiO2 film 2 on the top and further a SiH4 gas is thermally decomposed by the use of vacuum CVD device to pile a Si film 4 on the SiO2 film. Then, SiH2Cl2 is reacted with a NH3 gas by the use of the vacuum CVD device, a nitride film 6 is piled and pattern formation of the nitride film 6 is carried out by plasma etching. Then, LOCOS growth is carried out in high-temperature steam to form a LOCOS oxidized film 3 of poly Si and the nitride film 6 is removed with hot concentrated phosphoric acid. Then, the resulting film is thermally oxidized in a high-temperature dried oxygen to form a SiO2 film 5 and the SiO2 film 5 is partially removed. Then, the film is irradiated with CW argon ion laser. Explosion of the polycrystal film 4 and the oxidized film 5 caused by volume expansion resulting from melting of the polycrystal film 4 by the laser beam irradiation can be suppressed by partial removal of the oxidized film 4 and the thin film of single crystal can be formed in good reproducibility.
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