发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To decrease a wiring density and to increase the width of a power source wiring or a grounding wiring, which is provided in another layer, by forming a specific multilayer interconnection. CONSTITUTION:Signal wirings 3 and 4, a power source wiring and a grounding wiring are formed on different surface layers on the surface of a semiconductor integrated circuit substrate 9. Or any one of the power source wiring or the power-source and grounding wirings is formed on the same surface layer, and the remaining wirings are formed on the surface layer different from the same surface layer. When the signal wirings and the power-source and grounding wirings are divided, the power-source and grounding wiring layers 11 and 22 are provided on the upper parts of the signal wiring layers 3 and 4. Diffused source and drain 7a-7c, insulating films 8a-8c, the power source layer 11, a power source contact 11a, the grounding layer 22 and a grounding contact 22a are provided. Thus the wiring density can be improved, and the wiring pattern design is simplified.
申请公布号 JPS62181448(A) 申请公布日期 1987.08.08
申请号 JP19860024325 申请日期 1986.02.04
申请人 MITSUBISHI ELECTRIC CORP 发明人 HONMA TAKESHI;UEDA OSAMU
分类号 H01L21/3205;H01L23/52 主分类号 H01L21/3205
代理机构 代理人
主权项
地址