发明名称 METHOD AND APPARATUS FOR GROWING CRYSTAL
摘要 PURPOSE:To manufacture a crystal without any cracks and having a high mixed crystal ratio in large quantities by controlling the temp. of a crystal growing soln. vessel and at least one starting material dissolving vessel communicating with said vessel, and controlling the growing rate of the crystal. CONSTITUTION:In a crystal growing apparatus, a crystal growing soln. vessel 1 for containing a soln. 10 for growing crystals is communicated with a crystal material dissolving vessel 2 for obtaining said soln. 10 by dissolving a crystal material 11 in a solvent and a starting material dissolving vessel 3 for dissolving a mixed crystal material 9, and heaters 5, 6, and 7 are providd respectively to said vessels to control respective temps. The crystal growing rate of a crystal 8 is controlled by controlling the temps. of said each vessel 1-3 to a specified value, bringing a seed crystal 12 into contact with said soln. 10, and then pulling up slowly. The crystal without any cracks and having a high mixed crystal ratio can be manufactured in large quantities.
申请公布号 JPS6051693(A) 申请公布日期 1985.03.23
申请号 JP19830158733 申请日期 1983.08.30
申请人 HITACHI DENSEN KK 发明人 SAGAWA TOSHIO;UNNO TSUNEHIRO;TOYOSHIMA TOSHIYA;NAKAGAWA JIYUNKICHI
分类号 C30B15/02;C30B15/10;C30B29/40;H01L21/18;H01L21/208 主分类号 C30B15/02
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