发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To decrease the power consumption at an operation and to reduce a pattern area by constituting a pulse generating circuit only by a NOR circuit comprising two transistor (TR) groups respectively consisting of an N-channel and a P-channel MOS TR and comprising at least two driver TRs. CONSTITUTION:When an input signal (a) is inverted from L to H level, a TR Q2theta is turned off, a source signal (e) goes gradually to H level because it is charged by a P-channel MOS TR Q21. The charging time is extended by decreasing the mutual conductance of the TR Q21. When an input signal; the invert of (a) is inverted from H to L level, the discharge time of a source signal; the inverse of (e) is decreased by increasing the mutual conductance of a TR Q22. The charging time is extended on one hand and the discharge time is decreased on the other hand in this way, then the output signal (f) of a NOR circuit goes to H level and a pulse is generated.
申请公布号 JPS62181520(A) 申请公布日期 1987.08.08
申请号 JP19860025511 申请日期 1986.02.05
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMAMOTO MAKOTO
分类号 H03K5/1532;H03K5/00 主分类号 H03K5/1532
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