| 摘要 |
PURPOSE:To provide an electrically excellent contact characteristic with processes and materials being saved, by forming and overlapping amorphous silicon on the surface of a semiconductor device, crystallizing a part of the silicon, and forming a conductive contact. CONSTITUTION:On a P-type Si substrate 111, an N-MOS type transistor is formed. On an N-type Si substrate 112, a P-type MOS transistor is formed. After an electrode 14 is formed, an SiO2 film 13 is formed as a passivation film. Holes are provided at source and drain parts 121. After an amorphous Si film is formed on the entire surface, an amorphous Si film 152 at source and drain electrode parts is selectively crystallized. In said crystallization light is projected. The light has a wavelength, at which the absorption coefficient of the amorphous Si is sufficiently larger than the absorption coefficient of crystalline Si. The light is absorbed only in the amorphous Si layer and temperature is increased. Thus crystallization is achieved. The resistivity of the original amorphous Si film is very high, and the insulating property similar to that of an SiO2 film is provided. The resistivity of the crystallized polycrystalline Si layer is remarkably reduced, and the value, at which the layer can be used as a conductor, is obtained. |
