| 摘要 |
PURPOSE:To make the width of contact between a gate metal and a substrate narrower than the width of a hole in an insulating film, by evaporating the gate electrode from the vertical direction, with the insulating film, in which the hole is provided by etching obliquely with respect to the surface of the substrate, as a mask. CONSTITUTION:This method includes the following processes: a process for forming an insulating film 7 on a substrate 1; a process for forming a hole selectively in resist on the insulating film 7; a process for etching the insulating film 7 obliquely with respect to the surface of the substrate 1 with said resist as a mask and providing a hole; and a process for evaporating a metal film from the approximately vertical direction with respect to the surface of the substrate, with the insulating film as a mask. Since the SiO2 film 7 is etched obliquely with respect to the surface of the substrate 1 and a gate electrode 11 is evaporated and formed from the approximately vertical direction with respect to the surface of the substrate with the SiO2 film 7 as a mask, Schottky contact between the gate metal and an operating layer is obtained so that the width is narrower than the width of the hole in the SiO2 film 7. Thus the gate length can be shortened.
|
