| 摘要 |
PURPOSE:To make it possible to form a bump electrode having a normal shape on the entire normal element, by not providing a window in an oxide film, which is formed on an incomplete element, but forming a window only in an oxide film, which is formed on an impurity layer in the normal element, thereafter forming the bump electrode. CONSTITUTION:A thermal oxide film 5 is grown when an impurity layer 4 is formed on an incomplete element region and a normal element region in a wafer 1. Of said film 5, the oxide film 5, which is grown on the incomplete element 1a, is made to remain, and a window is selectively provided in the oxide film 5, which is grown on the impurity layer 4 on the normal element 1b. Thus a bump electrode 8 is formed. Therefore, a current in a placed part does not flow to the incomplete element 1a when the bump electrode 8 is formed. The current flows to only the normal element 1b. Therefore, the bump electrode 8 is not formed on the incomplete element 1a, and an abnormally swelled up bump electrode as observed in a conventional device does not occur. Adverse effects from the incomplete element 1a are eliminated. Thus, the bump electrode 8 having the normal shape is formed on the normal element 1b in the vicinity thereof.
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