| 摘要 |
PURPOSE:To prevent the generation of soft errors due to radiant rays by forming the inside edges of a high impurity concentration region for inter- element isolation as far as right under a high impurity concentration region connected to bit lines and to right under a high impurity concentration region for forming a charge storing region. CONSTITUTION:Both inside edges of a p<+> type impurity region 4 are extended respectively in lateral direction inside edge parts of a field oxide film 2 as far as right under an n<+> type impurity region 6a connected to a metallic wiring region 8 and to right under an n<+> type impurity region 6b which will become a charge storing region. By this constitution, electrons consisting of a pair of electrons and holes produced by incident radiant rays are caught in the p<+> impurity region 4 and are prevented from gathering in the n<+> type impurity regions 6a and 6b. Consequently, soft errors due to the damage of memory information or the like become not to be generated. |
