| 摘要 |
PURPOSE:To obtain a pattern which has plural number of inclination angles of the pattern edges with one time exposure and development by installing an exposure mask for forming the pattern wherein mask patterns are provided on plural layer mask pattern surfaces. CONSTITUTION:The upper and the lower two surfaces of a mask substrate are made mask pattern surfaces and on each surface, a mask pattern 2, 2' is provided. Between the two mask patterns 2, 2', an interval which is perpendicular to the mask pattern surface is provided and the interval is related to the width due to inclination of the edge of a resist pattern. Using a mask constructed in this way for pattern lithographing and selecting appropriate positions of the mask patterns 2, 2', one exposure can form the resist pattern which has two widths due to the edge inclinations. |
