| 摘要 |
PURPOSE:To realize a large capacity Bloch line memory device by using a snaking type conductor for an electric current driving type writing major line and arranging a stripe magnetic domain edge part opposite to the recessed part of a snaking type conductor pattern. CONSTITUTION:For an electric current driving type writing major line, a snaking type conductor pattern 10 having a bar-shaped 'Permalloy(R)' pattern 11 is used, and one side recessed part is opposite to an edge part 12a of a stripe magnetic domain 12. When a positive and reverse electric current pulses are alternately impressed to the conductor pattern 10, a bubble magnetic domain 13 is transferred and trapped to the tip of the Permalloy pattern 11. When the bubble column generated by a generator arrives at the recessed part of the conductor 10 opposite to the prescribed stripe magnetic domain 12 and a stretching pulse IS is impressed, a bubble magnetic domain 13 is drastically extended. Then, the tip 12a of the facing stripe magnetic domain 12 is rebounded by the stretched bubble, reduced drastically and Bloch line pairs 14 and 14' are written.
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