| 摘要 |
PURPOSE:To obtain a power source voltage detecting circuit which is stable against a variance of temperature, by using an MOS transistor TR, which is not subjected to channel doping, as a TR which detects a potential with a treshold. CONSTITUTION:For the purpose of lessening the variance of a detection voltage due to a change of temperature, R2/R1 is set to a small value, and the threshold of a TRT1 is set to a high value. In case of channel doping, the part of the TR T1 is masked to perfrom channel doping for a P-channel TR except the TRT1, and the threshold is reduced. If a bulk MOSTR which is not subjected to channel doping is used as the TRT1, the power source voltage detecting circuit which is relatively stable against a variance of temperature is obtained. |
