| 摘要 |
PURPOSE:To obtain a semiconductor pressure converter which has small remaining stress and good temperature characteristic and static pressure characteristic by employing Si of the sema material as a pressure sensitive pellet as a base for fixing the pellet, mirror-polishing the bonding surface, and interposing only an oxidized film on the polished surface to directly bond them. CONSTITUTION:A P type layer 3 for coupling in a bridge later is diffused and formed on a front surface layer of a both-side-polished N type Si substrate 1 as an electrostrictive resistance gauge, an insulating film 4 is covered on the overall surface, a hole is opened, and aluminum electrode wirings 5 are mounted on the layer 3. Then, with a PSG protective film of the prescribed shape as a mask it is etched to open a recess at the substrate 1 of the lower surface of the layer 3, and a thin diaphragm surface 2 which includes the layer 3 is formed at the remaining substrate 1. Subsequently, the lower surface of the substrate 1 for holding the diaphragm surface 2 is secured to the base 6. At this time, the same Si as the substrate 1 is used for the base 6, and the securing surface is mirror- polished, and thermally press-bonded integrally while interposing an SiO2 film 7. |
