| 摘要 |
PURPOSE:To constantly form a deposited film having uniform film quality and film thickness and excellent optical, electrical and photoconductive characteristics by changing the kinds of the diluting gases to be used together with gaseous raw materials in the mid-way of depositing the film. CONSTITUTION:Two kinds of the diluting gases are used together with raw materials for forming the deposited film in the stage of forming the deposited film by a plasma CVD method. The kinds of the diluting gases is changed at every layer to be formed or in the first half and second half in the formation of one layer. For example, the diluting gas in the first half in the formation of the layer is selected from H2, He, Ne and the diluting gas in the second half in the formation of the layer is selected from Ar, Kr, Xe. High-frequency of microwave energy is irradiated to the gaseous raw materials in this state to form the deposited film on a substrate surface. The surface characteristic and productivity of the film are improved by the above-mentioned method. |
