| 摘要 |
PURPOSE:To form grooves for in-element insulation and grooves for interelement isolation in one process by forming creeping regions having the other type of conductiv ity at the lower regions of the grooves to perform the interelement isolation. CONSTITUTION:The in-element insulation is performed by insulating layers 17 formed in grooves 15 to reach the upper part of one type of conductivity high-impurity concen tration buried layer 2 and the interelement isolation is performed by insulating layers 17 formed in grooves 16 to reach creeping regions 10 of the other type of conductivity. The inverse conductive type creeping regions 10 are formed at the lower regions of the grooves 16 to perform the interelement isolation. That is, this invention is an application of the nature of a impurity introduced in a semiconductor, which creeps up by heat-treating, and is one contrived in such a way that after the buried layer 2 is formed, an impurity of the other type of conductivity is ready-introduced in the interelement isolation regions and this is made to creep up in the following epitaxial growth process or so on to form the creeping regions 10 of the other type of conductiv ity, whereby both the grooves for in-element insulation and the grooves for interelement isolation have only to be a depth enough to be formed substantially in the same depth.
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