| 摘要 |
It is intended to utilise the advantages of various power semiconductors for a semiconductor circuit arrangement for self-commutated thyristor converters, it being intended that no auxiliary voltage sources be required. This is achieved in that each thyristor (1 in Figure 1; 11, 13, 15 and 14, 16, 12 in Figure 2) is connected in series with a field-effect transistor (3 in Figure 1; and 32 in Figure 2) which has a low reverse breakdown voltage, between the terminals of a DC source, each series circuit being connected in parallel with a power semiconductor (2 in Figure 1; 21, 23, 25 and 24, 26, 22 in Figure 2) which can be switched off, and in that the thyristor is triggered and the field-effect transistor is switched on in order to switch the arrangement on, and, in order to switch the arrangement off after completion of the triggering pulse for the thyristor, the power semiconductor which can be switched off is triggered and the field-effect transistor is thereafter switched off, after which the power semiconductor which can be switched off is turned off once the thyristor turn-off time has elapsed. <IMAGE>
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