| 摘要 |
PURPOSE:To provide high performance and high reliability in the characteristics of an integrated optical circuit device by integrating a semiconductor laser, a resistor and a plurality of FETs on a conductive GaAs substrate so that a current flowing the resistor flows in parallel with the laser and the FETs. CONSTITUTION:A cap layer grown layer 12 is used as an FET active layer, a blocking layer grown layer 17 is used as a resistor, and FETs 1, 2 have symmetrical structure with respect to a p-type electrode 16. BTRS semiconductor lasers 1-7 having two ridges on a substrate to implant the current only through between the ridges are formed in the same structure and manufacturing method as those of a normal BTRS semiconductor laser except that two sides except cavity surface and electrode surface are chemically etched or formed by dry etching and P-type electrodes 16, 20 are formed on the substrate. Thus, the laser in this integrated optical circuit has high performance and high reliability similar to those of a sole unit. |
