| 摘要 |
PURPOSE:To obtain an MIS type semiconductor device by forming an electrode pattern through an insulating film on a semiconductor, and selectively forming a junction region of superlattice structure due to ion implanting on a semiconductor portion except the portion directly under the pattern. CONSTITUTION:A P-type or N-type epitaxial layer 2 is grown on a substrate 1 made, for example, of gallium arsenide or the like, coated with a thin insulator film 3 thereon, and coated, for example, with a polycrystalline silicon electrode layer 4 to which an impurity is implanted. Then it is coated with a resist film 5, exposed in a fine pattern by an interference of an electrode beam or a laser light, and a pattern of an electrode layer 4 is formed by etching. With the eventually remaining layer 4 as a mask silicon ions are, for example, implanted to form a doping superlattice region 6 on the epitaxial layer. |
