| 摘要 |
PURPOSE:To double the capacity of current of an emitter by doubling the area of an emitter region while the area of a pattern size is the same with that of conventional ones. CONSTITUTION:The peripheral length of a P-type emitter region 27 is increased by a construction wherein an N<+> type base contact region 26 is disposed on the center, the emitter region 27 around the region 26, and further a P-type collector region 28 around the region 27. Since the emitter region 27 is disposed around the base contact region 26, the peripheral length of an emitter 27 can be made about three times larger than that of conventional ones while the area of a pattern size is made equal to that of conventional ones. Accordingly, the current capacity can also be trebled approximately. The peripheral length of the base contact region 26 is shortened, since this region 26 is disposed in the center. However, only a current of 1/hFE of a collector current (substantially equal to an emitter current) flows to a base of a transistor, and therefore the current capacity of the emitter region 27 is not restricted by the size of the base contact region 26.
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