| 摘要 |
PURPOSE:To improve laser oscillation characteristics by reducing current spreading in an (AlyGa1-y)0.5In0.5P cladding layer. CONSTITUTION:On an n-type GaAs substrate 1, a double hetero structure is constituted by an n-type (Al0.4Ga0.6)0.5In0.5P cladding layer 2 of 1mum thickness, an undoped Ga0.5In0.5P active layer 3 of 0.1mum thickness and a p-type (Al0.4 Ga0.6)0.5In0.5P cladding layer 4 and an n-type (Al0.4Ga0.6)0.5In0.5P inversion layer 5 is formed on the double hetero structure. After the inversion layer 5 is selectively etched off with an etchant such as diluted hydrochloric acid mixed solution so as to form a stripe region 9 of 2mum width, a p-type (Al0.4Ga0.6)0.5In0.5P layer 6 is again made to grow over the whole surface. Further, Ti/Pt/Au and Au/Ge are evaporated to form a p-type side electrode 7 and an n-type side electrode 8 respectively. Resonance planes are formed by cleavage and individual chips are formed by scribing.
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