| 摘要 |
PURPOSE:To control the regrowth of Si in a junction part between a poly Si pattern and an alloy layer as well as to favorably maintain the characteristics of the rest junction part by implanting Si ions in the former junction part. CONSTITUTION:As Si ions are implanted only into the junction part between a poly Si wiring layer 25 and an alloy layer 30, the Si content in the alloy layer 30 is increased and the formation of the poly Si wiring layer 25 and an alloy layer 30 into an alloy, which proceeds after heat-treating, that is, the regrowth of Si in the junction part is controlled. In addition, as the rest junction part is covered with a resist 32 and Si ions are not implanted into it, the Si content in the alloy layer can be held intact and the element characteristics of the contact forming part are not damaged.
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