| 摘要 |
PURPOSE:To obtain a semiconductor memory which has a large capacity, high integration and high density of one layer by extending a pair of adjacent memory capacitors to an access transistor of opposite side to laminate both double. CONSTITUTION:An electrode contact window 5A for an impurity diffused region 4A for a memory capacitor electrode contact is formed, individual electrodes 6A are formed, and extended to adjacent access transistor. An insulating film 7A becomes the dielectric of one memory capacitor, and an insulating film 7B becomes the dielectric of the other memory capacitor. The insulating film 5 is etched to form an electrode contact window 5B for an impurity diffused region 4B for a memory capacitor electrode contact, and electrode contact windows 5C, 5D for impurity diffused regions 3A, 3B for bit line contact. The memory capacitors in adjacent memory cells are extended to opposite access transistor to be laminated double. |
