| 摘要 |
PURPOSE:To improve the reliability on monitor to plasma processing state by a method wherein any reactive products are prevented from bonding on a plasma light taking in part. CONSTITUTION:A specimen 4 is mounted on a specimen base 3; the pressure in a processing chamber 13 is reduced and exhausted (a) down to the specific value by leading in process gas (b) from a gas supply piping 5; and the specimen 4 is impressed with microwaves from a magnetron 6 through a waveguide 7. Next, the process gas is changed into plasma by multiplying the microwaves by magnetic field to etch the specimen 4. Finally, plasma light is taken in from a lighting hole 14 as a lighting part through the intermediary of a quartz fiber 9 using the intensity change of specific wavelength in emission of plasma light taken place in process of etching the specimen 4 and after finishing the etching process to analyze the plasma light by an emitted light analyzer 10. Through these procedures, the end point of etching process can be detected.
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