| 摘要 |
PURPOSE:To simplify the steps by providing source and drain electrodes of superconducting metal formed separately in a semiconductor substrate and a gate electrode formed to generate a Schottky barrier in a boundary to a semiconductor in the substrate between the electrodes. CONSTITUTION:Source and drain electrodes 2, 3 are operated at sufficiently low temperature to become superconducting, and sufficiently high density impurity is implanted to generate a superconducting pass due to superconducting proximity effect in a semiconductor 1. A material is so selected as to generate a Schottky barrier in a boundary between a gate electrode 5 and the semiconductor 1, and a depletion layer region under the electrode 5 is controlled by varying a voltage applied to the electrode 5. When the depletion region is increased, a channel width is narrowed, while when decreased, a carrier density is increased so that the channel becomes a superconducting state due to superconducting proximity effect. Thus, a voltage applied to the gate electrode is varied to switch the conducting stage between the source and drain electrodes 2 and 3 to s superconducting state or nonsuperconducting state.
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