| 摘要 |
PURPOSE:To improve the carrier mobility and the conductance of a semiconductor device by specifying the thickness of a layer in which the carrier of a superlattice structure semiconductor layer made of two types of compound semiconductor thin film layers having no superposition of vibrations of LO phonon is locally disposed and disposing it in the traveling direction of a carrier moving area. CONSTITUTION:A superlattice structure semiconductor layer 3 of repeatedly laminated layers of extremely thin film layers of a compound semiconductor thin film layer 1 and a compound semiconductor thin film layer 2 in a carrier traveling area between a source S and a drain D opposed through a gate G is disposed so that its planar direction is along the carrier moving direction. The layers 1, 2 are formed of compound semiconductor having no superposition in LO phonon branch so that LO phonon is locally disposed. The thickness (a) of the semiconductor thin film layer in which electron is locally disposed such as the layer 1 is pi/q, where q is the kinetic amount in the layer 1 in which the carrier is locally disposed, q=m*vs, where m* is the effective mass of the carrier, vs is the saturation speed of the carrier in the bulk of the component material of the compound semiconductor. Thus, the mobility of the carrier can be increased.
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