| 摘要 |
PURPOSE:To reduce an insensitive region with high output and to improve the yield of a photoconductive infrared ray detector by increasing the thickness of a portion in direct contact with a metal electrode larger than a photodetecting unit. CONSTITUTION:A thick semiconductor wafer 7 is formed with a suitable adhesive on an insulation substrate 1, a chromium film 8 is deposited, and a metal film 6 ohmically contacted with the wafer 7 is formed. Then, a photoresist pattern 5 is formed, with the pattern as a mask the film 6 is selectively removed, the portion of the wafer 7 in which the film 6 is removed is reduced by etching in thickness, the pattern 5 is then removed to form an insulation film 3. Thus, an insensitive region can be reduced without decreasing the output, the area is reduced, and a detector is manufactured in high yield.
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