发明名称 SEMICONDUCTOR LASER ELEMENT
摘要 PURPOSE:To realize excellent I-L characteristics by a method wherein a current is not injected into the region near the end surface of a resonator waveguide to avoid the deterioration of the end surface caused by Joule heat and that region is excited by an emitted light from an LED operating part whose current is controlled by independent electrodes. CONSTITUTION:When a current is applied between a P-type electrode an an N-type electrode of an LED operating part provided at the end position of a resonator, an active layer 16 directly above a V-groove 14 operates as an LED and emits a light. The emitted light propagates in the active layer 16 and is injected into the end surface region of a laser oscillation waveguide. In other words, the region near a resonance end surface with is to be saturable absorption element and into which a current is not injected is excited by the injection of the emitted light from the LED operating part. With this constitution, the absorption of the laser beam at the laser oscillation operating part is reduced and improvement of the linearity of I-L characteristics can be achieved. Moreover, as the LED operating part has electrodes independent from the laser operating part, the deterioration of the I-L characteristics caused by the insufficiency of emitted luminance of the LED operating part can be avoided and the yield of the manufacture of the element can be improved and, further, as Joule heat is not created in the laser beam waveguide region near the end, the deterioration of the end surface can be suppressed.
申请公布号 JPS62179193(A) 申请公布日期 1987.08.06
申请号 JP19860020450 申请日期 1986.01.31
申请人 SHARP CORP 发明人 MAEI SHIGEKI;HAYASHI HIROSHI;YAMAMOTO SABURO
分类号 H01L33/14;H01L33/24;H01L33/30;H01L33/36;H01S5/00;H01S5/042 主分类号 H01L33/14
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