| 摘要 |
PURPOSE:To simplify a manufacturing process by forming two projections on an element forming region on a substrate, forming electrodes thereon, and then sequentially growing one conductivity type semiconductor layer and an intrinsic semiconductor layer on the entire substrate over the electrodes. CONSTITUTION:The entire glass substrate 1 is covered with an SnO2 layer, patterned to form electrodes 2A, 2B, with the electrodes as masks two projections 1A, 1B are formed by dry etching on an element forming region. Then, a p-type a-Si layer 3 is formed as one conductivity type semiconductor layer and an i-type a-Si layer 4 is formed as an intrinsic semiconductor layer continuously by a plasma CVD method, and the entire substrate is covered as a protective film with an an Si3N4 layer 5. The photodetector formed in this manner is formed by burying a pair of electrodes between the substrate and an element and of the type for receiving light from the back surface of the substrate. In this case, it is a planar type that the element surface is buried. Lithographic steps are reduced to simplify the manufacturing process.
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