| 发明名称 |
Permeable base transistor and process for its manufacture. |
| 摘要 |
<p>The transistor comprises a semiconductor substrate (1) of a first type of conductivity, a gate made of a metallic silicide (3), insulated on its two, upper and lower faces, and a semiconductor layer (5) of a second type of conductivity. Application to the construction of high-power, high-speed transistors. <IMAGE></p> |
| 申请公布号 |
EP0230840(A1) |
申请公布日期 |
1987.08.05 |
| 申请号 |
EP19860420263 |
申请日期 |
1986.10.27 |
| 申请人 |
ETAT FRANCAIS REPRESENTE PAR LE SECRETAIRE D'ETAT AUX POSTES ET TELECOMMUNICATIONS ET A LA TELEDIFFUSION;INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON (ETABLISSEMENT PUBLIC A CARACTERE SCIENTIFIQUE CULTUREL ET PROFESSIONEL) |
发明人 |
ROSENCHER, EMMANUEL;DELAGE, SYLVAIN;VINCENT, GILBERT |
| 分类号 |
H01L21/335;H01L29/772 |
主分类号 |
H01L21/335 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
