| 摘要 |
PURPOSE:To prevent a constraint to electrode density, and to enable mounting having high density by preparing an insulating sheet with a metal penetrated up to both upper and lower surfaces and projection solder on the end surfaces of the metals, holding the insulating sheet between a semiconductor element and a substrate and melting and solidifying the projection solder. CONSTITUTION:Metals 13 such as Ni are buried where corresponding to foundation metals 11 in an insulating sheet 12, and the sheet 12 is dipped in molten solder and hemispherical solder 14 by surface tension is fitted only on both upper and lower surfaces of the metals 13. A semiconductor element 10, the sheet 12 ad a substrate 15 on which a conductive pattern 16 is shaped are superposed in the order and heated. The sheet 12 is held between the element 10 and the substrate 15, and fixed through the metals 13. Accordingly, mounting having high density is enabled.
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