| 摘要 |
PURPOSE:To execute ion plantation and sputtering vapor deposition on the surface of a substrate to be subjected to vapor deposition with a simple device by providing an ion source, metal for vapor deposition having an angle of inclination with the ion source and the freely rotatable substrate in a vacuum chamber. CONSTITUTION:A sample 4 of a cutting tool or the like is placed in a position (a) in the vacuum chamber 2. N ions are released from the ion source 5 to sputter the surface of the sample 4 by which the N ions are implanted to the surface. The sample 4 is then turned to a position (b) and the surface of a metallic plate 10 for vapor deposition such as Ti disposed inclinedly at an angle theta is sputtered by the ions of Ar, etc., drawn from the ion source 5 to deposit the atoms of the metal 10 for vapor deposition on the surface of the sample 4 in the position (B). The ion plantation and vacuum deposition by ion mixing are executed on the surface of the substrate 4 with a piece of the ion source by repeating the above-mentioned ion plantation and sputtering, by which the TiN film is formed.
|
