| 摘要 |
PURPOSE:To form many alloy films having the same compsn. by changing the film thickness ratio of the alloy films to be formed by respective targets in the stage of forming the alloy films having the specified compsn. by sputtering using the plural targets having different compsn. ratios. CONSTITUTION:The target 3 formed of Mo 1 and Si 2 is used in the stage of forming the alloy film having the same compsn. consisting of, for example, Mo and Si by sputtering on the surface of wafers. The erosion of the target progresses on treatment of the many wafers and the compsn. ratio of Si:Mo of the alloy films on the wafers changes. Two sputtering chambers 131 and 132 are provided in a sputtering device in order to prevent such change. The target 31 having 1/3 Si/Mo ratio and the target 32 having 1/2.75 Si/Mo ratio are then placed therein and the thicknesses of the alloy films by the targets 31 and 32 are changed on progressing of the erosion of the targets 31, 32 so that the alloy films having the specified Si/Mo ratio are formed on the many wafers.
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