| 摘要 |
PURPOSE:To obtain a high speed access and high integration ROM by using a transistor in which its source and its drain are shortcircuited therebetween for one memory transistor of binary information. CONSTITUTION:An enhancement type ion implanting is performed in a semiconductor substrate 100. Then, a gate insulating film 9 is formed, and a resist film 20 is formed on a first transistor region (a) on the film 9. Then, with the film 20 as a mask the film 9 remains only on the region (a) by etching, and with the films 20, 9 as masks an impurity diffused region 3 is formed. Thereafter, the film 20 is removed, and a gate conductor layer 1 is formed. After the source and the drain are then soft-doped, a phosphosilicate glass film 22 is formed on the entire surface. Subsequently, a contact hole 4 is opened, and a drain aluminum conductor 2 is formed through the hole. |
